Abstract
Full and partial InGaAsP quantum well, laser structures grown by gas source molecular beam epitaxy, have been subjected to various thermal anneal treatments. Room temperature photoluminescence has been used to measure changes in the quantum well emission wavelength. In all cases, the wavelength decreases (blue-shifts) after the anneal treatment and the details of this blue-shift with anneal time and temperature have been used to establish how specific grown in defects and defects produced through surface dissociation can be used to explain the thermally induced changes.
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