Abstract
The thermal stability of nickel silicide (NiSi) on source/drain and gate is one of the important research topics in complementary metal oxide semiconductor technology. Here we report the effects of germanium-ion implantation (Gel/I) on the thermal stability of NiSi on poly-Si gates. Scanning electron microscope inspections and thin-film X-ray diffraction results show that agglomeration and NiSi 2 transformation can be suppressed by high dosage Ge implanted on poly-Si gates. The allowable process temperature of NiSi formation can be increased by 100°C.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
