Abstract
The significant thermal stability improvement induced by laser annealing (LA) is demonstrated for 50-A Ni(Pt) film silicidation. For the first time, it is revealed that LA may induce less stress in ultrathin Ni(Pt)Si film during silicidation, which can directly improve the thermal stability of the film. The local area annealing model is proposed to discuss the origin of stress relief. Besides, it is discovered that LA can result in a higher Pt concentration at the Ni(Pt)Si film surface, which will also enhance the resistance of Ni(Pt)Si film agglomeration.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
