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Abstract
The adsorption of thin Sb overlayers on GaAs(110) and InP(110) and their behavior during thermal annealing were studied with Raman spectroscopy, soft x-ray photoelectron spectroscopy, Auger electron spectroscopy, and low-energy electron diffraction. When deposited at room temperature, Sb forms a fairly well ordered monolayer with amorphous Sb on top. Upon annealing, the Sb forms crystalline islands which desorb at temperatures above 475 K leaving a well ordered monolayer of Sb behind. On InP(110) this monolayer is stable only up to around 500 K, whereas on GaAs(110) it remains stable to annealing temperatures above 580 K. For this well ordered Sb monolayer, the Schottky barriers are found also to be different for GaAs and InP. On GaAs, the barrier is low on both p- and n-type substrates, whereas on InP we find a low barrier on n-type and a barrier of 0.6 eV on p-type substrates. The differences in Schottky barriers and thermal stability of the ordered Sb monolayer leads to the conclusion that Sb bonds differently to GaAs and InP.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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