Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures

Abstract

Doping efficiency and thermal stability of intrinsic modulation doping in InP/InGaAs heterostructures, where intrinsic defects (PIn antisites) are used as an electron source, are investigated. A high efficiency of the intrinsic doping is demonstrated from a comparison between the intrinsically doped and conventional extrinsically doped structures. The thermal stability of the intrinsically doped heterostructures is shown to be largely affected by the thermal stability of the InP surface.