Abstract
The thermal stability and the atomic ordering of single-crystal Heusler alloy Co2FeSi layers grown by molecular beam epitaxy on GaAs(001) have been studied. We found that the Co2FeSi layers have a long-range atomic order and crystallize in a partly disordered L21 structure in the low growth temperature (TG) regime. The long-range atomic order of the layers is further improved with increasing TG up to 350°C. However, the increase of TG induces an interfacial reaction between the Co2FeSi layer and the GaAs substrate. The analysis of the in-plane magnetic anisotropy reveals that the interface perfection is improved up to TG=200°C and deteriorated due to an interfacial reaction above 200°C.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
