Abstract
This research reports on the thermal stability of Ni–NiO x –Cr based Metal–Insulator–Metal (MIM) junction. Effect of annealing (250 to 400 °C) on the electrical and physical transport properties of this MIM stack was understood to determine the thermal budget allowable when using these diodes. MIM tunnel junctions were fabricated by sputtering and the NiO x was formed through reactive sputtering. The performance of the tunnel junctions after exposure to elevated temperatures was investigated using current–voltage measurements. This was correlated to the structural properties of the interfaces at different temperatures, characterized by Atomic Force Microscopy, X-ray Diffraction and Transmission Electron Microscopy (TEM). MIM tunnel junctions annealed up to 350 °C demonstrated satisfactory current–voltage characteristics and sensitivity. MIM junctions exhibited improved electrical performance as they were heated to 250 °C (sensitivity of 42 V − 1 and a zero-bias resistance of ~300 Ω) due to improved crystallization of the layers within the stack. At temperatures over 350 °C, TEM and Energy Dispersive Spectra confirmed a breakdown of the MIM structure due to interdiffusion.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
