Abstract
This paper presents a simple methodology that combines 2D device simulation with the thermal circuit model to simulate the self-heating in SOIs. Depending on the use of either drift-diffusion (DD) or energy balance (EB) equations, results based on the simplified approaches show a time saving of 25-90% over the rigorous heat flow (HF) model which consists of the energy balance equations and heat flow equation. A 2D device simulator, S-PISCES, was used to demonstrate the approaches.
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