Abstract
In this contribution we show how the joint use of finite elements (FEM) thermal simulations together with validation through a state-of-art experimental setup which is capable of detecting temperature transients with 100kHz equivalent bandwidth capability allows for an optimal comprehension of the electro-thermal interactions taking place in low-voltage Smart Power MOSFETs. In particular, we propose the usage of an experimentally validated numerical simulator to foresee the maximum temperature swing occurring on the device area in order to evaluate mechanical stresses at bond wire joints that can lead to reduced reliability of the device and, eventually, to failure.
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