Abstract
We have investigated the magnetic switching properties of synthetic antiferromagnetic (SyAF) structures consisting of Co90Fe10∕Ru∕Co90Re10 structure with a Ru capping layer annealed at 300°C. After annealing, the coercivity Hc of the structures with a Co90Fe10 thickness below 5nm increased. On the other hand, the Hc was maintained below 70Oe in structures with a Co90Fe10 thickness above 6nm after annealing. Thus, a low switching field for a free layer can be achieved by using the SyAF structures with a Ru capping layer, even after annealing at 300°C, and the SyAF free layer is considered to be effective for downsized memory cells in magnetic random access memories.
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