Abstract
We have investigated the magnetic switching properties of synthetic antiferromagnetic (SyAF) structures consisting of Co90Fe10∕Ru∕Co90Re10 structure with a Ru capping layer annealed at 300°C. After annealing, the coercivity Hc of the structures with a Co90Fe10 thickness below 5nm increased. On the other hand, the Hc was maintained below 70Oe in structures with a Co90Fe10 thickness above 6nm after annealing. Thus, a low switching field for a free layer can be achieved by using the SyAF structures with a Ru capping layer, even after annealing at 300°C, and the SyAF free layer is considered to be effective for downsized memory cells in magnetic random access memories.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
