Abstract

The heat flow across a substrate with a temperature-dependent thermal conductivity, such as is commonly encountered with planar semiconductor structures, is discussed. Analytic solutions are derived for an isothermal active-layer approximation, and numerical results are presented for a constant heat flux at the active-layer boundary. Important features of the flow of heat in the structures, such as thermal-flow spreading, temperature increases for elevated operating temperatures and other aspects, are treated.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call