Abstract
The temperature-dependent photoluminescence in oxygen-implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells is investigated. A difference in the thermal quenching of the photoluminescence is found between the implanted and unimplanted quantum wells. Oxygen implantation and subsequent rapid thermal annealing results in the diffusion of magnesium atoms into quantum wells and thus, leads to an increased fluctuation in the potential of the quantum wells and the observation of a large thermal activation energy. However, a high dose of implantation results in large defect clusters and thus an additional nonradiative channel, which leads to a flat potential fluctuation and a small thermal activation energy.
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