Abstract
We have studied Zn diffusion from an electroplated elemental source, using rapid thermal annealing techniques to investigate a range of diffusion times from 3 to 30s. Improved surface morphology is obtained by exploiting the high vapor pressure of Zn to remove excess source material, leaving only one to two monolayers of Zn tightly bound to the substrate. Resultant diffusions form shallow (0.1–0.2 μm) heavily doped regions. Junction properties are almost independent of diffusion time and linear in temperature over the range investigated.
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