Abstract
We investigate the thermal properties of thin InSe layers with high-κ oxide Al2O3 stress liners. Temperature-dependent Raman spectroscopy demonstrated that the Al2O3 passivation layer significantly reduced the thermal variation coefficients of the in-plane E2g1 phonon mode of the InSe layer from −0.03284 cm−1/K to −0.0212 cm−1/K in comparison with the InSe sample without the Al2O3 capping layer. Combined with power-dependent Raman spectroscopy, the in-plane thermal conductivity of InSe reaches about 53.1 W/mK, ∼40% greater than that without the Al2O3 capping layer, 38.2 W/mK, which is attributed to the large thermal conductivity of Al2O3 and the electron-phonon interactions at the interface. Generally, this work will contribute to improving the performances of the InSe-based nano-devices and extending their applications profoundly.
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