Abstract
Thin-film HfO2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56-200-Aring-thick HfO2 films. A picosecond pump-probe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/(mmiddotK). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.
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