Abstract

The crystallization process in Se100–xZnx glassy system is investigated using differential scanning calorimeters (DSC). The samples are prepared by conventional melt-quenching technique in the composition range 2 ≤ x ≤ 20 (at%). Non-isothermal measurements are carried out for different heating rates .The value of the glass transition temperature Tg the crystallization temperature Tc and the crystallization peak temperature Tp, are found to be depending upon both heating rate as well as the composition from thermal analytical data. The investigation of crystallization kinetics indicates a single stage crystallization process. The glass transition energy Eg and the crystallization activation energy Ec are also evaluated from thermal analytical data. The analyzer has been used the most reliable non-isothermal kinetic methods. The value of kinetics parameters Eg, Ec and ‘n’ are calculated using non-isothermal kinetics methods. The analysis shows that the incorporation of Zinc content has a strong influence on the crystallization mechanism for the Se100–xZnx glassy system.

Highlights

  • The thermal behavior of the amorphous glassy alloys plays an important role in determining the transport mechanism, thermal stability and the practical applica- tions

  • The glass transition energy Eg and the crystallization activation energy Ec are evaluated from thermal analytical data

  • The kinetics parameter of crystallization has been investigated under the non-isothermal methods in glassy Se100–xZnx (2 ≤ x ≤ 20)

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Summary

Introduction

The thermal behavior of the amorphous glassy alloys plays an important role in determining the transport mechanism, thermal stability and the practical applica- tions. Crystallization studies are of crucial importance due to some of technical appli- cations of these materials, namely optical recording me- dia and memory switching devices. We have applied selected non-isothermal models reported to be the most reliable for determination of kinetic parameters of the crystallization process. Except some reported thermal studies for the binary Se100–xZnx system [6,7], the present contributory goal is studying the crystallization kinetics in Se100–xZnx system using different preparation method, compositions and non-isothermal analysis methods in detail. Se-based glassy alloys are very interesting and unique class of amorphous semiconductors which have large technical applications in electronics and optoelectronics. The use of Se-Te, Se-Ge, Se-Sb, Se-Ln and Se-Zn is called binary system [5,6,7,8,9,10] alloys and is remains of their various properties like greater hard- ness, higher sensitivity, higher conductivity and smaller aging effect as compared to pure a-Se

Experiment
Results and Discussion
Evaluation of Avrami Index ‘n’
Rate of Crystallization Glassy Se100–xZnx Alloys
Conclusions

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