Abstract
Manganin gauge produced by Dynasen Corp (USA) in the form of planar structure of 2.5 μm thick and the nominal resistance of 20 Ω was investigated. The open surface of the gauge was implanted with 60 keV Ti ions at the fluence of 10 16 ion/cm 2 and then with 250 MeV Kr ions at the ion fluence of 10 13 Kr ion/cm 2. For Ti implantation the TRIM computer program (Transport of Ions in Matter) gives the maximum penetration range of about 50 nm. For high energy Kr ion implantation a special protection foil of 13 μm thick was used. The TRIM method of calculation gives information that Kr ions are located with the approximately constant density of 0.4 × 10 19 Kr ions/cm 3 all over the volume of the samples. The authors assumed that during Kr implantation Ti atoms moved into manganin up to a 0.5 μm depth. The temperature dependencies of electrical resistance of pure and implanted gauges were studied in the temperature range 20–220 °C. Using the modelling procedure for deeper interpretation of implanted foils with a layered structure, described in detail earlier by authors [5], one can calculate that the resistivity of mixed ion implantation volume decreases by about 40%. That means strong influence of Ti ions on conductivity of manganin. One can see that R– T (resistance–temperature) characteristic of gauge in the room temperature vicinity is improved in large measure. According to our data concentration of Ti ions in manganin is of the order of 2 × 10 22 Ti ions/cm 3.
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