Abstract
Spatially resolved thermal profiling of a semiconductor optical amplifier enables measurement of the gain and saturation characteristics without recourse to direct optical measurements. We observe the spatial onset of gain saturation, quantify both the saturated and unsaturated gain, and accurately predict the optical output power. Effects such as suboptimal operating conditions are identified. Since this method is independent of optical measurements, it is ideal for use with integrated devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
