Abstract

Strained 100 Å GaAsSb quantum wells in GaAs, grown by Molecular Beam Epitaxy have been subjected to thermal anneals up to a temperature of 950°C and for times varying from a few seconds to several minutes. The interdiffusion on the group V sublattice has been monitored using photoluminescence of the ground state emissions from the quantum well. We have made measurements on undoped and both p and n, Be and Si, doped structures. The intermixing is observed to be strongly non-linear. Doping is found to reduce the interdiffusion.

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