Abstract
SUMMARYThe effects of thermal‐dissipation structure on the thermal performance of nanoscale InGaP/GaAs collector‐up heterojunction bipolar transistors were investigated by using the advanced hybrid optimization technique, a combination of the three‐dimensional finite‐element method for temperature‐distribution analysis and the technology computer‐aided design tool for power‐performance evaluation. Through adequately locating the thermal‐dissipation structure at the rear side of the transistor and via effective thickness‐thinning procedures, which reduce foundry cost, the thermal coupling between collector fingers has been greatly ameliorated and a power‐added efficiency of 45% is achieved. Copyright © 2013 John Wiley & Sons, Ltd.
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