Abstract
A novel method that converts a semiconductor transient thermal impedance curve (TTIC) into an equivalent thermal RC network model is presented. Thermal resistance (R) and thermal capacitance (C) parameters of the model are identified using manufacturer's data and offline recursive least square techniques. Relevant estimation theory concepts and the formulation of an appropriate model for the identification process are given. Model synthesis is illustrated using an isolated base power transistor module. The application of time decoupled theory for high order thermal models is outlined. Simulation of junction temperature responses using model and manufacturer TTICs are compared. Estimated parameter validity is further confirmed by parameter calculation obtained from module physical dimensions. >
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