Abstract
A model for the growth kinetics of a dielectric film obtained by oxidation of silicon in nitrous oxide environment is presented. The complete logarithmic form of oxidation kinetics is introduced for understanding the oxynitridation mechanism which includes information of the role of nitrogen in oxide film. The model fits experimental data excellently, both for short and long growth times. The chemical reaction energies of 1.81 and 1.1 eV are required for the oxynitridation for short and long growth times, respectively. This result suggests that the initial stage of the dielectric growth requires the higher reaction energy to form the layer and the lower energy is needed for the bulk oxide formation from the reaction with the interfacial layer of the . For the oxidation, there are two barriers for the chemical reactions for NO and species dissociated from molecules.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
