Abstract
The noise performance of double-gated (DG) and single-gated (SG) MOSFETs is compared. We observe a significant improvement of the noise figure (NF) in the DG structure, which is explained in terms of a favorable increase of cross-correlation between the drain and gate currents. Finally, we showed that the presence of a residual P-type impurity in the channel of a DG structure induces noticeable changes in the spectral density of the gate current fluctuations that is reflected on the noise figure.
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