Abstract
The paper describes a study of the thermal nitridation of SiOxHy thin films deposited in a low-pressure chemical vapor deposition process. It is shown that films with an O/Si concentration ratio of about 1 are readily nitrided over a thickness of 20 nm, whereas films with an O/Si ratio of 0.4 take up nitrogen in a thin surface layer only. At higher temperatures oxygen escapes from the film in measurable quantities, notably in the films with O/Si=1.
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