Abstract
AbstractThermal nitridation of silicon in both nitrogen and nitrogen-hydrogen plasma has been performed around 1000°C for 5 min to 10 hr. From Auger electron spectroscopy analysis, the formed films contain some oxygen and are identified as oxynitride films in both cases. In nitrogen-hydrogen plasma, high nitrogen fraction( 0.8) in the film is obtained for the nitridation of 5 min. Thus, the addition of hydrogen to nitrogen enhances the nitrgen fraction in the film for such a short nitridation time. The film thickness is almost constant against the nitridation time and is limited to be about 40 Å. Capacitance-voltage characteristics of aluminum gate metal- nitride-semiconductor capacitors show stable behaviors and the fixed charge density at the film-substrate interface is estimated to be the order of 1012 cm−2 in both cases.
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