Abstract
Depth dependent nitridation enhanced diffusion (NED) of Sb was investigated by annealing Si(100) doping superlattice (DSL) structures in NH3 at 810–910 °C for 15–180 min. These multilayered DSLs consisted of six 10 nm wide Sb doping spikes spaced 100 nm apart. Antimony NED, attributed to vacancy injection, indicated vacancy supersaturation values of 3–5. From the spatial decay of Sb NED, lower bounds for vacancy diffusivities of (7.9±1.4)±10−14, (1.2±0.2)×10−12, and 2.1×10−11 cm2/s were obtained at 810, 860, and 910 °C, respectively. Evidence of trap limited vacancy diffusivity was observed.
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