Thermal neutron damage in CdS and CdTe

Abstract

Abstract Photoluminescence and electrical resistivity changes in CdS and CdTe produced by thermal neutrons are discussed. The damage is produced principally by the neutron capture reaction 113Cd (n,y) 114Cd. Since the reaction product 114Cd is stable, complications arising from impurity introduction is minimal. The cumulative recoil nuclear recoil energy is about 143 eV, but is not the recoil energy at the time atomic displacement occurs. Thermal and fast neutrons enhance the CdS luminescence band at 7200A in the ratio of 28:1, but the resistivity changes are in the ratio of 40:1 Cd interstitial is suggested as the luminescence center. Hall measurements on n-type CdTe suggest that only Cd defects are produced for low thermal neutron doses. The acceptor introduction rate is about 1.0 to 0.6, compared to 0.098 for CdS. These are in good agreement with the values reported by R. O. Chester. The fast neutron effects in high resistivity CdS reported by Johnson indicate the need for further measurement.