Abstract
In this study, we passively analyzed the near-field characteristics of thermally excited evanescent waves, which are radiation waves generated by the local dynamics of materials, including electron motions and lattice vibrations. The thermally excited evanescent waves on aluminium nitride (AlN) and gallium nitride (GaN) were measured using passive spectroscopic scattering-type scanning near-field optical microscopy (s-SNOM) in the wavelength ranges of 10.5–12.2 μm and 14.0–15.0 μm, which include the surface phonon-polariton (SPhP) wavelength of the studied dielectrics. We determined the unique decay characteristics of AlN and GaN, indicating a ten-fold increase in the probe area contributing to the scattering of waves near the SPhP wavelength compared to that in other wavelength ranges. The extended probe area correlated with the polariton decay lengths, indicating that the non-enhanced polaritons around K ~ ω/c were dominant in the scattered waves near the SPhP wavelength. In addition to the conventional passive detection mechanisms for metals, the proposed detection scheme will be a versatile passive detection model in the near future.
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