Abstract
InP/Ga0.47In0.53As/InP single quantum wells, which are grown by the organometallic vapor phase epitaxy technique, exhibit multiple peaks in thermally modulated photoluminescence (TMPL) spectra. In two samples with nominal well widths at 10 A, at least four well‐resolved negative and at least two positive TMPL peaks are observed. The number of peaks is related to the growth conditions, and the relative intensities of the peaks depend on the sample temperature and the PL excitation intensity. In the thinnest quantum wells at least some of these discrete peaks may be associated with regions where the well widths differ in thickness by single monolayer steps.
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