Thermal models for laser damage in InSb photovoltaic and photoconductive detectors

Abstract

Models were developed for thermal damage in laser-irradiated InSb photovoltaic detectors and photoconductive detectors. The model for thermal damage in photoconductive detectors must consider the effects of the layered construction. For describing damage in photovoltaic detectors the model should include the radial heat conduction resulting from the Gaussian profile of the incident laser beam. The irradiation-time dependences of the permanent-damage thresholds calculated using the models are in good agreement with the experimentally determined thresholds for InSb materials.