Thermal–mechanical behavior of the bonding wire for a power module subjected to the power cycling test

Abstract

Two analytical methods were proposed in this research, coupled electro-thermal finite element (FE) analysis and thermal–mechanical FE analysis, to analyze the mechanical behavior of bonding wire of power module under cyclic power loads, and the International Electrotechnical Commission standard is adopted in conducting a power cycling test. The exterior temperature distribution was measured by an infrared thermometer. Moreover, the junction temperature is calculated from the given thermal impedance of the semiconductor chip, chip power loss, and case temperature. Subsequently, the simulated temperature distribution via electro-thermal FE analysis is compared with experimental results to validate the methodology used in the aforementioned analysis. The analysis shows compressive stress at the wire/chip interface due to CTE mismatch between the aluminum and the chip. Moreover, the major driving force contributing to the shear stress at the interface is the self-expansion of the wire bump.