Thermal mapping and 3D numerical simulation of new cellular power MOS affected by electro-thermal instability

Abstract

In this paper we present experimental results of dynamic thermal mapping on a new class of low-voltage high-current power MOS transistors. Moreover, we have developed an electro-thermal simulation tool in order to analyze and understand the causes that can determine the temperature instabilities observed in these devices. Experimental results indicated that, similarly to power BJTs, also in this class of devices the hot-spot phenomenon occurs. The experimental set-up, based on a InSb single sensor, is able to achieve a high time resolution (less than 10μs), high spatial resolution (less than 10μm on 5×5cm2 active areas) and good temperature resolution (less than 0.1°C).