Abstract
We study the thermal stability of P doped and undoped pseudomorphically strained Si:C alloy formed by high fluence ion implantation and subsequent solid phase epitaxial regrowth (SPER), under post-annealing conditions far below the β-SiC precipitation threshold. The strain is measured by high resolution X-ray diffractometer (HRXRD) and kinematic simulation. By plotting the differential strain relaxation with respect to post-annealing time, we found much lower deactivation energy at the near surface region while the presence of high P concentration results in more significant strain relaxation. We explain the near surface relaxation by considering the interstitials injection by surface oxide formations during the post annealing process. P in the bulk on the other hand plays the role as additional interstitial kick-out mediator and lowers the thermal stability.
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