Abstract
Temperature influence on the device behavior has been carried out on AlGaAs/InGaAs/GaAs-based pseudomorphic high-electron mobility transistor fabricated in multilayer 3-D monolithic microwave integrated circuits technology over multibias operation condition. The multibias thermal effect on the dc and RF, small-signal (up to 40 GHz) and large-signal parameters, including the third-order intercept points as well as the linear and third-order intermodulation output power performance at 4 GHz were analyzed and reported for the first time. In addition, the noise figure parameters of device have been reported and estimated at 10 GHz. The temperature coefficients of the device dc and RF parameters are carefully established at the peak transconductance condition. The results are important for the design optimizations of advanced monolithic multilayer integrations.
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