Abstract
Hybrid organic–inorganic perovskites have attracted significant attention due to their remarkable optoelectronic properties and the feasibility of cost‐effective, high‐throughput manufacturing of perovskite solar cells (PSCs). The present p–i–n PSCs have poor film‐forming ability on poly[bis(4‐phenyl)(2,4,6‐trimethylphenyl)‐amine] (PTAA) film, resulting in a great number of defects within perovskite. Herein, the cerium ion (Ce3+) into the PTAA layer is successfully incorporated, which is thermal‐induced transferred onto the perovskite lattice and surface layer, by replacing Pb2+ in partial or uncoordinated metalsites and Ce3+–Ce4+ ion pair to suppress the bulk/surface defects, leading to a significantly enhanced power conversion efficiency (PCE). Systemically studies demonstrate that thermal‐induced Ce3+/4+‐doped MAPbI2.91Br0.09 thin film possesses superior film morphology with a uniform surface, suppressed nonradiative recombination, and enhanced crystallinity due to fewer bulk/surface defects. Moreover, PSCs by MAPbI2.91Br0.09/PTAA:xCe3+/4+ (x = 0.5 wt%) thin film exhibit suppressed charge carrier recombination and shorter charge carrier extraction time. As a result, PSCs by MAPbI2.91Br0.09/PTAA:xCe3+/4+ (x = 0.5 wt%) thin film exhibit PCE of 21.32% with significantly increased fill factor (FF) of 81.17% and long‐term stability. All these results indicate that the approach provides a facile way to incorporate rare‐earth ions into perovskites to boost the performance of PSCs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.