Abstract
A significant fraction of Czochralski (Cz) Silicon (Si) wafers suffer from oxygen-related bulk quality issues. The detection of such wafers in the as-cut state during incoming inspection has become a topic of attention as higher efficiency solar cell structures are developing. However such detection - for instance using photoluminescence images – has not yet proven successful due to a high risk of detection errors Shih et al. (2015) [1]. In this work, we tentatively introduce a material quality indicator referred to as “Thermal History Index” (THI) and investigate its ability, in conjunction with the interstitial oxygen concentration ([Oi]), to allow a better identification of low bulk quality wafers.
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