Abstract
Experimental data are reported from studies of the thermal expansion of single crystals of the layered compounds TlGaSe2 and TlInS2 in the plane of the layers and in the direction perpendicular to the layers in the temperature region 20–300 K. Observed features of the thermal expansion are discussed in the light of the available data on the elastic properties of TlGaSe2 and TlInS2. It is found that the differences in the temperature behavior of the thermal expansion coefficients in the plane of the layers α∥(T) in the TlGaSe2 and TlInS2 crystals are due to the different degree of anisotropy of these crystals and to the different value of the “interlayer” elastic constant C13.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
