Abstract
Thermal expansion is practically and theoretically important for predicting residual stresses in epitaxial films and electronic devices as well as for providing information about the anharmonic properties of materials, and determining their equations of state. Model calculations have had difficulty in accurately representing thermal expansion at high temperatures where such considerations are most important. We utilize a semi-empirical quasi-harmonic model to evaluate available data for silicon and germanium. The model allows us to predict the thermal properties of these semiconductors from near 0 K to the vicinity of their melting points. The approach, consisting of a simplified frequency spectrum with several Einstein terms, provides a convenient mathematical method where a minimum of empirical parameters represent the thermal property.
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