Abstract
A high-quality Ba2TiSi2O8 (BTS) single crystal was grown using the Czochralski (Cz) pulling method. The thermal expansion and electro-elastic properties of BTS crystal were studied for high temperature sensor applications. The relative dielectric permittivities ε 11 T / ε 0 and ε 33 T / ε 0 were determined to be 16.3 and 11.8, while the piezoelectric coefficients d15, d31, d33 were found to be 17.8, 2.9, and 4.0 pC/N, respectively. Temperature dependence of electro-elastic properties were investigated, where the variation of elastic compliance s 55 E (= s 44 E ) was found to be <6% over temperature range of 20–700 °C. Taking advantage of the anisotropic thermal expansion, linear thermal expansion comparable to insulating alumina ceramic was achieved over temperature range up to 650 °C. The optimum crystal cut with large effective piezoelectric coefficient (>8.5 pC/N) and linear thermal expansion coefficient (8.03 ppm/°C) achieved for BTS crystal along the (47°, φ) direction (φ is arbitrary in 0–360°), together with its good temperature stability up to 650 °C, make BTS crystal a promising candidate for high temperature piezoelectric sensors.
Highlights
High temperature piezoelectric sensors operational above 600 ◦ C are in great demand for industries, such as automotive, aerospace and power plants, etc. [1,2,3,4,5]
Of particular interest is that the Ba2 TiSi2 O8 (BTS) crystal belongs to the tetragonal phase with point group of 4mm, possessing three independent piezoelectric coefficients [19], which will benefit the design of optimum piezoelectric crystal cut without piezoelectric cross-talks
The temperature dependence of the elastic constants for BTS crystal is investigated over temperature range of 20–700 °C
Summary
High temperature piezoelectric sensors operational above 600 ◦ C are in great demand for industries, such as automotive, aerospace and power plants, etc. [1,2,3,4,5]. Of particular interest is that the BTS crystal belongs to the tetragonal phase with point group of 4mm, possessing three independent piezoelectric coefficients [19], which will benefit the design of optimum piezoelectric crystal cut without piezoelectric cross-talks. All these features indicate the potentials of BTS crystal for high temperature piezoelectric applications. In order to explore the optimum piezoelectric crystal cut for high temperature sensor applications, in this work, high quality BTS single crystals are grown and the electro-elastic properties, together with the thermal expansion behavior, are studied as a function of temperature and crystallographic orientation. The optimum crystal cut with large piezoelectric coefficient and suitable thermal expansion over a broad temperature range is explored
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