Abstract
ABSTRACTBismuth triiodide (BiI3) is a potential candidate for application in solar cell due to its good optoelectronic properties and because it is free of toxic elements. It can be used as the absorber material in solar cells or converted into the perovskite-like material MA3Bi2I9, suitable also for photovoltaic applications. Bismuth triiodide has been prepared by physical vapour transport (PVT) and by solution process through spin coating. In this work we present optical and structural/topological properties of BiI3 deposited by thermal evaporation under high vacuum. The films are slightly tensile, polycrystalline, homogenously distributed and with good adherence on several substrates, with an indirect bandgap of 1.81 eV, index of refraction of 3.3 (630 nm), photoluminescence centered at 1.74 eV and a Raman peak at 118cm-1 associated with the Ag mode.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
