Abstract
The experimental investigations on the valence band density of states (VBDOS) of a-Si:H, by X-ray photoelectron spectroscopy, UV photoelectron spectroscopy and Auger electron spectroscopy measurements under various thermal treatments are presented. Significant reversible changes in VBDOS are observed upon quenching the specimen to 100 K and annealing at 200°C for 2 h. A microscopic atomic model to describe the observed changes in VBDOS is developed.
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