Year-end Sale % OFF 
Abstract
We provide evidence for the existence of an antiferromagnetic coupling betweeniron epilayers separated by a wedge-like ZnSe crystalline semiconductor bymagnetometric and ferromagnetic resonance experiments. The coupling strength of46 µJ m−2 for tZnSe = 25 Å is strongly reduced as the barrier thickness is increased. Thecoupling increases linearly with temperature from 5 to 300 K, with a5.5 × 10−9 J m−2 K−1 rate. Thermally induced effective exchange coupling mediated by spin-dependent tunnellingof electrons via localized mid-gap defect states in the ZnSe spacer layer appearsto be the most plausible mechanism to induce the antiferromagnetic coupling.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
