Abstract
Lead halide perovskites have emerged as successful optoelectronic materials with high photovoltaic power conversion efficiencies and low material cost. However, substantial challenges remain in the scalability, stability and fundamental understanding of the materials. Here we present the application of radiative thermal annealing, an easily scalable processing method for synthesizing formamidinium lead iodide (FAPbI3) perovskite solar absorbers. Devices fabricated from films formed via radiative thermal annealing have equivalent efficiencies to those annealed using a conventional hotplate. By coupling results from in situ X-ray diffraction using a radiative thermal annealing system with device performances, we mapped the processing phase space of FAPbI3 and corresponding device efficiencies. Our map of processing-structure-performance space suggests the commonly used FAPbI3 annealing time, 10 min at 170 °C, can be significantly reduced to 40 s at 170 °C without affecting the photovoltaic performance. The Johnson-Mehl-Avrami model was used to determine the activation energy for decomposition of FAPbI3 into PbI2.
Highlights
Lead halide perovskites have emerged as successful optoelectronic materials with high photovoltaic power conversion efficiencies and low material cost
radiative thermal annealing (RTA) is widely used in the semiconductor industry due to its ease in achieving high temperatures and fast ramp rates
In this work we show that processing FAPbI3 using RTA produces devices with comparable efficiencies to those made on a hotplate
Summary
RTA is widely used in the semiconductor industry due to its ease in achieving high temperatures and fast ramp rates. It is cost effective and provides better temperature control and potential access to metastable states[29]. This system uses light from halogen lamps without any filter as the heating source to anneal samples with controlled radiation. The as spin-coated films were annealed with both hotplate and RTA for a variety of times and hold temperatures. Further comparison of the FAPbI3 films made with a Absorbance (a.u.)
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