Abstract
The microstructure of amorphous SiO2 thin film is a random network structure in which a large amount of [SiO4] is interconnected with a specific SiOSi bond angle. The SiO2 thin films used in this paper were prepared by ion beam sputtering and electron beam evaporation deposition techniques. Two-dimensional correlation spectroscopy analysis techniques were used in this study. By measuring the infrared temperature spectrum, we obtained the two-dimensional correlation synchronous spectrum and asynchronous spectrum, and decomposed the in-phase and out-phase asymmetric stretching vibration characteristics of SiOSi. As the temperature increases, the spectral transmittance of the vibrating peak decreases, and the relative change of in-phase asymmetric stretching vibration absorption peak is higher than that of the out-phase asymmetric stretching vibration absorption peak.
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