Abstract

III-V nanowire lasers for future photonic on-chip processors require continuous-wave operation at room temperature; however, this has not been achieved yet due to heating effects. In this work, the heating effects limiting laser performance is systematically investigated for nanowires placed on Au-coated substrates before and after Al2O3 deposition and on Si and SiN waveguides. Our findings indicate that nanowire heating is strongly related to the thermal resistance between the nanowires and substrates. Our results reveal the potential for continuous-wave nanowire laser operation, towards future photonic on-chip processors with nanowires integrated on photonic platforms.

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