Thermal drift reduction in photodiode dosimeters with switching bias

Abstract

The effect of temperature on dosimetric measurements is a major limitation of solid-state dosimeters. This is especially true for PIN photodiode dosimeters, where the dark current depends exponentially on temperature. To minimize this effect, a compensation method is presented that relies on the diode structure itself without the need for an external sensor or device. During irradiation, the photodiode is periodically switched from reverse to forward polarization to determine the temperature of the device. This measurement is based on the linear dependence between the temperature and the forward voltage of the diode when it is operated at constant current. An electronic circuit implementing this procedure was developed and used for experimental characterization of the response to radiation of the BPW34S Si PIN photodiode. The proposed procedure reduced the uncertainty due to thermal drift by a factor of 7.5. In addition, an average dose rate sensitivity of 12 ± 2 nC/cGy was measured, with a sensitivity degradation below 2% for the irradiation cycle of 21.4 Gy performed under a 6 MV photon beam. We have shown that a p-n junction can be successfully used to compensate for the temperature effect on the dosimetric measurement.