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Abstract
Thermal sensitivity measurements of diazoquinone/novolac (DQN), poly-olefin sulfone/novolac (SNS), and an acid catalyzed/proprietary resin (XPR) were made by gently exposing coated wafers at 10−9 amp/cm2 on a cooled/heated stage in our e-beam exposure tool. The results were characterized by the influence of exposure temperature on blanket-exposure-dissolution rates and developed image profiles. Three-dimensional Monte Carlo absorbed-energy-density calculations have been combined with ANSYS finite-element-thermal analysis to estimate the time evolution of temperature profiles on silicon wafers, silicon membranes, and SiO2 wafers at 50 keV. Lithographic modeling system (LMS) has then combined the predicted thermal fronts with the experimentally measured resist response to predict the effects on image profiles. Thermal proximity effects in 2 μm wide lines are negligible on Si wafers, 3–5% on Si membranes, and two to three times worse on SiO2 substrates.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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