Abstract
Thermal diffusivities of molten boron oxide, which is one of the favorable liquid capsule materials for producing GaAs or GaP single crystals, have been measured systematically in the temperature range between 1000 and 1500K using a three layered laser flash method. The thermal diffusivity of molten boron oxide were found to decrease with increasing content of P2O5 or In2O3 additives.
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