Abstract
Thermal diffusivity values of molten germanium and silicon were measured by a laser flash method. Simple but useful sample cell systems were developed to keep the molten germanium and silicon shape uniform for a given thickness. In the present experimental condition, it is necessary to consider the effect of not only the radiative heat loss but also the conductive heat loss at the interface between the molten sample and the cell material under the present experimental conditions. However, the computer simulation results suggest that the conductive heat loss is found to be negligibly small. The thermal diffusivity values of molten germanium and silicon are given in the following equations (unit: m 2 /s). α Ge = 1.40 x 10 -8 (T - 1218) + 2.29 x 10 -5 1218 ≤ T ≤ 1398 (unit: K) α Si = 4.48 x 10 -9 (T - 1685) + 2.23 x 10 -5 1685 ≤ T ≤ 1705 (unit: K).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
