Abstract
Current-voltage (I-V) characteristic measurements of Ag/3,4,9,10-Perylenetetracarboxylic Dianhydride/In/Si(001) heterostructures demonstrate that when the structure temperature approaches the In melting point the I-V characteristic changes from rectifying to Ohmic and the current amplitude increases by several orders of magnitude. The synchrotron radiation photoemission investigation of the 3,4,9,10-Perylenetetracarboxylic Dianhydride (PTCDA) layers of the same thickness grown on In in the same temperature range show strong In diffusion throughout the PTCDA layers as thick as 1 μm. The In 4 PTCDA coordination compound was not observed on the PTCDA surface and it appears to be limited to the region near the In/PTCDA interface [1].
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
